Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation

Normally-off operation of high electron mobility transistors is desired for many reasons, however proved to be difficult to achieve, despite the rapid development of the depletion mode devices. Amongst the few approaches proposed so far, we focus on two, which promise high performance. The first device features an InGaN cap layer, while the later relies on gate recess technology. We perform DC and AC analyses, using our device simulator calibrated against experimental data, and compare the performance of the devices based on simulation results.